Archivio Istituzionale della RicercaThin superconducting films of MgB2 has been prepared on r-plane sapphire and silicon nitride (SiN) by ex-situ technique and co-deposition of B and Mg at several substrate temperatures with the aim to fabricate superconducting bolometers. MgB2 films on r-plane sapphire, realized by annealing of a B film at 890°C, show a Tc=38 K and RRR=2 while no transition has been observed for MgB2 films on SiN above 5 K treated in the same way. A reliable process of MgB2 growth on SiN with Tc between 27 K and 30 K and transition width of 0.5 K has been performed by co-deposition Mg and B and following annealing to 600°C.
MgB2 Superconducting Films for Bolometer Applications / Monticone, E.; Rajteri, M.; Portesi, C.; Bodoardo, Silvia; Gonnelli, Renato. - In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY. - ISSN 1051-8223. - 13:2(2003), pp. 3242-3244. [10.1109/TASC.2003.812211]
MgB2 Superconducting Films for Bolometer Applications
BODOARDO, SILVIA;GONNELLI, Renato
2003
Abstract
Thin superconducting films of MgB2 has been prepared on r-plane sapphire and silicon nitride (SiN) by ex-situ technique and co-deposition of B and Mg at several substrate temperatures with the aim to fabricate superconducting bolometers. MgB2 films on r-plane sapphire, realized by annealing of a B film at 890°C, show a Tc=38 K and RRR=2 while no transition has been observed for MgB2 films on SiN above 5 K treated in the same way. A reliable process of MgB2 growth on SiN with Tc between 27 K and 30 K and transition width of 0.5 K has been performed by co-deposition Mg and B and following annealing to 600°C.
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https://hdl.handle.net/11583/1400913
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