statistiche ricercatore

statistiche per DONATI GUERRIERI, SIMONA

Distribuzione geografica
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Continente #
NA - Nord America 13089
EU - Europa 12264
AS - Asia 1619
AF - Africa 81
SA - Sud America 71
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 1
Totale 27128
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Nazione #
US - Stati Uniti d'America 13058
GB - Regno Unito 2730
IT - Italia 2669
DE - Germania 2200
FR - Francia 2195
UA - Ucraina 903
CN - Cina 673
NL - Olanda 422
TR - Turchia 375
SE - Svezia 344
KR - Corea 249
RU - Federazione Russa 240
FI - Finlandia 161
JP - Giappone 83
AP - ???statistics.table.value.countryCode.AP??? 67
AT - Austria 65
IN - India 55
CH - Svizzera 47
SN - Senegal 43
TW - Taiwan 43
RO - Romania 42
CO - Colombia 39
CA - Canada 28
EU - Europa 27
BG - Bulgaria 26
IE - Irlanda 26
ES - Italia 24
PK - Pakistan 24
NO - Norvegia 20
IR - Iran 18
CZ - Repubblica Ceca 17
AE - Emirati Arabi Uniti 16
IL - Israele 16
VN - Vietnam 15
ZA - Sudafrica 14
CL - Cile 13
MY - Malesia 12
BR - Brasile 10
PT - Portogallo 8
BE - Belgio 7
EC - Ecuador 7
EG - Egitto 7
HU - Ungheria 7
HK - Hong Kong 6
HR - Croazia 6
NG - Nigeria 6
SG - Singapore 6
LU - Lussemburgo 5
SD - Sudan 5
UZ - Uzbekistan 4
DZ - Algeria 3
GR - Grecia 3
LV - Lettonia 3
MX - Messico 3
PH - Filippine 3
TH - Thailandia 3
AR - Argentina 2
BD - Bangladesh 2
EE - Estonia 2
ID - Indonesia 2
KZ - Kazakistan 2
PL - Polonia 2
RS - Serbia 2
SA - Arabia Saudita 2
AM - Armenia 1
AU - Australia 1
BT - Bhutan 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
ET - Etiopia 1
IQ - Iraq 1
LT - Lituania 1
MD - Moldavia 1
SK - Slovacchia (Repubblica Slovacca) 1
TN - Tunisia 1
Totale 27128
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Città #
Ashburn 3894
Southend 2486
Seattle 2130
Fairfield 1090
Woodbridge 525
Ann Arbor 480
San Ramon 476
Jacksonville 466
Houston 429
Wilmington 408
Turin 379
Cambridge 376
Princeton 370
Bologna 356
Izmir 310
Torino 305
Beijing 204
San Donato Milanese 173
Frankfurt 167
Chicago 158
San Francisco 150
Helsinki 148
San Jose 140
Buffalo 136
Baltimore 126
Pennsylvania Furnace 124
Zaporozhye 122
Overberg 119
Saint Petersburg 109
Monopoli 99
Zhengzhou 93
Padua 91
Shanghai 84
Amsterdam 77
Milan 72
Rome 71
Vienna 62
San Diego 59
Malatya 57
Norwalk 48
Redwood City 48
Mountain View 47
Menlo Park 44
Hangzhou 43
Shenzhen 42
Kriens 40
Fremont 38
Guangzhou 36
Las Vegas 35
Seoul 34
Valfenera 33
Modena 31
Atlanta 28
Melun 26
Austin 25
Nanjing 25
Kansas City 24
Paris 24
Moscow 23
Galati 22
Sofia 22
Dallas 21
Fuzhou 20
San Antonio 19
Falls Church 18
Islamabad 18
Podenzano 18
Putian 18
Stavanger 18
Charleston 17
Indiana 17
Lamézia 17
Phoenix 17
Verona 17
West Chester 17
Ningbo 16
Berlin 15
Clearwater 14
Muizenberg 14
University Park 14
Amarillo 13
Catania 13
New York 13
Redmond 13
Frankfurt Am Main 12
Genova 12
Levallois-perret 12
Seongnam 12
Yokosuka 12
Zhitomir 11
Bangalore 10
Brno 10
Fort Lauderdale 10
Hyderabad 10
Lappeenranta 10
Los Angeles 10
Osaka 10
Tokyo 10
Toronto 10
Bogota 9
Totale 18406
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Nome #
A 22W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications 501
A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications 423
Dispositivi e tecnologie elettroniche 392
K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver 392
A generalized drift-diffusion model for rectifying Schottky contact simulation 390
When self-consistency makes a difference 383
3.5 GHz WiMAX GaN Doherty Power Amplifier with 2nd harmonic tuning 379
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models 371
Modeling and simulation of noise in transistors under large-signal condition 355
Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification 350
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications 348
A frequency-domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential-algebraic equations 347
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation 332
Large-signal device simulation in time- and frequency-domain: a comparison 326
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis 324
Application of Floquet Theory to the Large Signal Stability Analysis of Microwave Amplifiers 315
Harmonic Balance Simulation and Analysis 301
Noise source modeling for cyclostationary noise analysis in large-signal device operation 300
Concurrent Dual-Band SiGe HBT Power Amplifier for Wireless Applications 285
Physics-based modeling of FinFET RF variability 281
Cyclostationary noise modeling of radio frequency devices 281
Large-signal stability of symmetric multi-branch power amplifiers exploiting Floquet analysis 257
A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position 253
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation 251
Compact modelling of cyclostationary noise in semiconductor devices: a critical discussion 247
Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems 240
Multi-gate FinFET Mixer Variability assessment through physics-based simulation 239
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion 237
Concurrent Efficient Evaluation of Small-Change Parameters and Green's Functions for TCAD Device Noise and Variability Analysis 235
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity 232
Innovative techniques for device large-signal noise simulations 230
Sensitivity-based optimization and statistical analysis of microwave semiconductor devices through multidimensional physical simulation (invited article) 228
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation 214
Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation 211
Application of physical models to circuit simulations 211
Green’s function based simulation of trap-induced device variability 208
Author's reply to "Comments on "Noise source modeling for cyclostationary noise analysis in large-signal device operation"" 206
Self-consistent fully dynamic electro-thermal simulation of power HBTs 205
Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization 203
Evaluation of GaN HEMT Technology Development Through Nonlinear Characterization 202
Physics-based analysis of FinFET RF variability including parasitics 201
A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates 201
Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions 201
Modeling elettrotermico auto-consistente di dispositivi HEMT su GaN per applicazioni di potenza 200
Base-band Predistortion Linearization scheme of High Efficiency Power Amplifiers for wireless applications 200
Predistorsione in Banda Base per la linearizzazione di un amplificatore Doherty per applicazioni wireless con efficienza media del 50%. 200
A surface-potential-based MOSFET compact model accounting for random doping fluctuations 200
Design and baseband predistortion of a 43.5 dBm GaN Doherty amplifier for 3.5 GHz WiMAX applications 199
Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications 197
Physics-based nonlinear noise modelling 194
An efficient numerical approach to the physics-based sensitivity analysis of bipolar semiconductor devices 189
Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison 187
Physics-based mixer noise simulation 184
GaN HEMT Technology Development Assessment through Nonlinear Characterization 183
Dispositivi e circuiti elettronici 183
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity 182
A new dynamic self-consistent electro-thermal model of power HBTs and a novelinterpretation of thermal collapse loci in multi-finger devices 182
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 181
A New Analytical Model for High Frequency MOSFET Noise 180
Small and large signal trap-assisted GR noise modeling in semiconductor devices 180
Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation 179
7 GHz GaN MMIC power amplifier for microwave radio links with 45% drain efficiency in a wide power range 177
Variability of FinFET AC parameters: A physics-based insight 176
Self-Consistent electro-thermal model for GaN HEMTs devices evaluation 176
CAD-oriented, physics-based large- and small-signal noise analysis of bipolar semiconductor devices 173
Design of MultiBand SiGe HBT Power Amplifier: from device characterization to system level evaluation 171
Floquet-Based Stability Analysis of Power Amplifiers Including Distributed Elements 171
Self-Consistent Coupled Carrier Transport Full-Wave EM Analysis of Semiconductor Travelling-Wave Devices 168
A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime 168
Assessment of GaN-based power amplifiers through self-consistent electrothermal modelling and nonlinear characterization. 165
Physics-based modeling of FinFET RF variability under Shorted- and Independent-Gates bias 164
A New, Closed-Form Compact Model for the Cyclostationary Noise and LS Conversion Behaviour of RF Junction Diodes 163
Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications 163
Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations 163
Physics-based noise modelling of semiconductor devices in large-signal operation including low-frequency noise conversion effects 162
On linearisation of microwave-transmitter solid-state power amplifiers 162
Nonlinear noise in devices: sources, frequency conversion mechanisms and statistical noise process characterization 162
Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers 161
Physics-based RF noise modeling of submicron MOSFETs 161
Nonlinear characterization of advanced GaN HEMT devices 161
A Comprehensive GaN HEMT Characterization for Power Amplifier Design 161
Microwave device optimization through efficient numerical simulation 161
Nonlinear models with nonlinear memory 158
Simulazione e progetto termico di transistori e MMIC di potenza su semiconduttori composti per applicazioni spaziali 158
Rigorous, HB-based nonlinear stability analysis of multi-device power amplifier 157
RF sensitivity analysis of independent-gates FinFETs for analog applications exploiting the back-gating effect 156
Impact of Substrate Resistance on Drain Current Noise in MOSFETs 156
Simulation of cyclostationary noise in semiconductor devices 153
Large-signal variability of microwave power amplifiers through efficient device sensitivity-based physical modeling 150
Considerations on the impact of power device dynamic electrothermal phenomena on power amplifier non-linearities 150
A new predistortion scheme with efficient IMP optimization for high linearity MMIC power amplifiers 150
Simulazione FEM di dispositivi a semiconduttore in regime periodico di ampio segnale nel dominio del tempo e della frequenza 150
Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers 148
A distributed analytical model for pn junction small- and large-signal noise analysis in low injection conditions 147
A novel approach to microwave circuit large-signal variability analysis through efficient device sensitivity-based physical modeling 145
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators 145
Analisi di rumore ciclostazionario nei dispositivi operanti in regime di ampio segnale 145
Algorithms for the physics-based numerical noise simulation of semiconductor devices operated in large-signal conditions 144
Caratterizzazione non-lineare di HEMT su GaN per applicazioni di potenza 143
Thermal simulation and optimization of AlGaN/GaN HEMTs 143
Totale 21875
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Categoria #
all - tutte 53534
article - articoli 15511
book - libri 1018
conference - conferenze 36265
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 740
Totale 107068
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/20186047 453568603579 619714 989506 51120221984
2018/20193424 16450404307 45242 6642 280448749627
2019/20203287 342202126424 409327 348428 3961616559
2020/20212322 288338107290 83279 116196 179179154113
2021/20222045 89156894 181178 12164 114160403477
2022/20236 6000 00 00 0000
Totale 27372
 
 
 
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